(Singapore)
Product Summary
The TPC8024 is a TOSHIBA Field Effect Transistor. The applications of the TPC8024 include High-Efficiency DC／DC Converter Applications, Notebook PC Applications, Portable Equipment Applications.
Parametrics
TPC8024 absolute maximum ratings: (1)Drain-source voltage VDSS: 30V; (2)Drain-gate voltage (RGS = 20kΩ) VDGR: 30V; (3)Gate-source voltage VGSS: ±20V; (4)Drain current DC ID: 13A; (5)Drain current Pulsed IDP: 52A; (6)Drain power dissipation (t=10s) PD: 1.9W; (7)Drain power dissipation (t=10s) PD: 1.0W; (8)Single-pulse avalanche energy EAS: 110mJ; (9)Avalanche current IAR: 13A; (10)Repetitive avalanche energy EAR: 0.084mJ; (11)Channel temperature Tch: 150℃; (12)Storage temperature range Tstg: -55℃ to 150℃.
Features
TPC8024 features: (1)Small footprint due to a small and thin package; (2)High-speed switching; (3)Small gate charge: QSW = 6.9nC (typ.); (4)Low drain-source ON-resistance: RDS (ON) = 6.8mΩ(typ.); (5)High forward transfer admittance: |Yfs| =32 S (typ.); (6)Low leakage current: IDSS = 10μA (max) (VDS = 30V); (7)Enhancement mode: Vth = 1.1V to 2.3V (VDS = 10V, ID = 1mA).
Diagrams
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 TPC8046-H(TE12L,Q) |
Toshiba |
MOSFET MOSFET N-CH 40V 18A |
Data Sheet |
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TPC8065-H,LQ(S |
Toshiba |
MOSFET MOSFET, N-ch, -30V, -9A, SOP-8 |
Data Sheet |
Negotiable |
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TPC8067-H,LQ(S |
Toshiba |
MOSFET MOSFET, N-ch, 30V, 9A, SOP-8 |
Data Sheet |
Negotiable |
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TPC8030(TE12L,Q,M) |
Toshiba |
MOSFET N-ch 30V 11A SOP-8 |
Data Sheet |
Negotiable |
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TPC8026(TE12L,Q,M) |
Toshiba |
MOSFET MOSFET N-Ch 30V 13A |
Data Sheet |
Negotiable |
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TPC8102 |
Other |
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Data Sheet |
Negotiable |
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