Product Summary

The BUR52 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, indented for use in switching and linear applications in military and industrial equipment. The BUR52 is used in linear and switching industrial equipment.

Parametrics

BUR52 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 350 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 250 V; (3)VEBO Emitter-Base Voltage (IC = 0): 10 V; (4)IC Collector Current: 60 A; (5)ICM Collector Peak Current (tp = 10 ms): 80 A; (6)IB Base Current: 16 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 350 W; (8)Tstg Storage Temperature: -65 to 200 ℃; (9)Tj Max. Operating Junction Temperature: 200 ℃.

Features

BUR52 features: (1) SGS-Thomson preferred salestype; (2) NPN transistor; (3) maintains good switching performance even without negative base drive.

Diagrams

BUR52 block diagram

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Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL

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BUR51
BUR51

STMicroelectronics

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Data Sheet

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BUR52
BUR52

STMicroelectronics

Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL

Data Sheet

Negotiable