(Singapore)
Product Summary
The 2SB560 is a PNP/NPN Epitaxial Planar Silicon Transistor for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier use.
Parametrics
2SB560 absolute maximum ratings: (1)Collector to base voltage VCBO:-100V; (2)Collector to emitter voltage VCEO:-80V; (3)Emitter to base voltage VEBO: -5V; (4)Collector current IC: -0.7A; (5)Collector current (pulse): -1.0A; (6)Collector power dissipation PC: 900mW; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg:-55℃ to +150℃.
Features
2SB560 features: (1) Collector to base breakdown voltage: -100V; (2) Collector to emitter breakdown voltage: -80V; (3) Emitter to base breakdown voltage: -5V; (4) Collector cutoff current: -1.0μA; (5) DC current Gain: 60 to 560; (6) Collector to emitter saturation voltage: -0.8V; (7) Base to emitter saturation voltage: -1.2V; (8) Gain bandwidth product: 100MHz.
Diagrams
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2SB566 |
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