Product Summary

The MJ4502 is a high power PNP silicon transistor.

Parametrics

MJ4502 absolute maximum ratings: (1)Collector-base voltage VCBO: 100 V; (2)Collector-emitter voltage VCEO: 90 V; (3)Emitter-base voltage VEBO: 4V; (4)Collector current IC: 30A; (5)Base current IB: 7.5A; (6)Total Device dissipation @ TC=25℃ : 200W; (7)Operating and Storage Junction temperature range Tstg: -65℃ to 200℃.

Features

MJ4502 features: (1) High DC Current Gain: hFE = 25 to 100 @ IC = 7.5A; (2) Excellent Safe Operating Area; (3) Complement to the NPN MJ802.

Diagrams

MJ4502 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ4502G
MJ4502G

ON Semiconductor

Transistors Bipolar (BJT) 30A 100V 200W PNP

Data Sheet

0-1: $2.30
1-25: $2.02
25-100: $1.61
100-500: $1.39
MJ4502
MJ4502

ON Semiconductor

Transistors Bipolar (BJT) 30A 100V 200W PNP

Data Sheet

Negotiable