(Singapore)
Product Summary
The BUX12 is an epitaxial power transistor. The applications of the BUX12 include power switching circuits, motor control.
Parametrics
BUX12 absolute maximum ratings: (1)VCBO Collector – Base Voltage (IE = 0): 300V; (2)VCEX Collector – Emitter Voltage (VBE = –1.5V): 300V; (3)VCEO Collector – Emitter Voltage (IB = 0): 250A; (4)VEBO Emitter – Base Voltage (IC = 0): 7V; (5)IC Collector Current: 20A; (6)ICM Peak Collector Current (tp = 10 ms): 25A; (7)IB Base Current: 4A; (8)Ptot Total Power Dissipation at Tcase≤25℃: 150W; (9)Tstg, Storage Temperature: -65℃ to 200℃; (10)Tj Junction Temperature: 200℃.
Features
BUX12 features: (1) high current; (2) fast switching; (3) high reliability.
Diagrams
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 BUX12 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BUX10 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Power |
Data Sheet |
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BUX10X |
Other |
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Data Sheet |
Negotiable |
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BUX11 |
Other |
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Data Sheet |
Negotiable |
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BUX11N |
Other |
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Data Sheet |
Negotiable |
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BUX12 |
Other |
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Data Sheet |
Negotiable |
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BUX16 |
Other |
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Data Sheet |
Negotiable |
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