Product Summary

The 2SK1530 is a Toshiba silicon N channel MOS type field effect transistor.

Parametrics

2SK1530 absolute maximum ratings: (1)Drain-source voltage VDSS: 200 V; (2)Gate-source voltage VGSS: ±20 V; (3)Drain current (Note 1) ID: 12 A; (4)Drain power dissipation (Tc = 25℃) PD: 150 W; (5)Channel temperature Tch: 150 ℃; (6)Storage temperature range Tstg: -55 to 150℃.

Features

2SK1530 features: (1) High breakdown voltage: VDSS = 200 V; (2) High forward transfer admittance: |Yfs| = 5.0 S (typ.); (3) Complementary to 2SJ201.

Diagrams

2SK1530 dimension

Image Part No Mfg Description Data Sheet Download Pricing
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2SK1530
2SK1530

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Data Sheet

Negotiable 
2SK1530-Y(F)
2SK1530-Y(F)

Toshiba

MOSFET MOSFET N-CH 200V 12A TO-3PL

Data Sheet

Negotiable