(Singapore)
Product Summary
The 2SA988 is a PNP silicon transistor. It is designed for use in driver stage of AF amplifier.
Parametrics
2SA988 absolute maximum ratings: (1)Storage Temperature: -55℃ to +125℃; (2)Junction Temperature: +125℃ Maximum; (3)Total Power Dissipation: 500mW; (4) VCBO Collector to Base Voltage: -120V; (5) VCEO Collector to Emitter Voltage: -120V; (6) VEBO Emitter to Base Voltage: -5.0V; (7) Collector Current: -50mA; (8) Base Current: -10mA.
Features
2SA988 features: (1) High voltage VCEO: -120V; (2) Low Output Capacitance: 2.0pF TYP. (VCB=-30V); (3) High hFE: 500 TYP. (VCE = -0.6V, IC = -1.0mA).
Diagrams
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 2SA965-Y(TE6,F,M) |
Toshiba |
Transistors Bipolar (BJT) Transistor PNP, 120V, 0.8A |
Data Sheet |
Negotiable |
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 |
2SA933ASTPR |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
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 |
2SA933ASTPS |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
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2SA933ASTPQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
|
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 |
2SA985 |
Other |
|
Data Sheet |
Negotiable |
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2SA985A |
Other |
|
Data Sheet |
Negotiable |
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