(Singapore)
Product Summary
The 2N4900 is Silicon PNP Power Transistor. The applications of the 2N4900 include designed for driver circuits, switching and amplifier applications.
Parametrics
2N4900 absolute maximum ratings: (1)VCBO Collector-base voltage: -80V; (2)VCEO Collector-emitter voltage: -80V; (3)VEBO Emitter-base voltage Open collector: -5V; (4)IC Collector current: -1.0A; (5)ICM Collector current-peak: -4.0A; (6)IB Base current: -1.0A; (7)PD Total Power Dissipation TC=25℃: 25W; (8)Tj Junction temperature: 150℃; (9)Tstg Storage temperature: -65℃ to 200℃.
Features
2N4900 features: (1) With TO-66 package; (2) Low collector saturation voltage; (3) Excellent safe operating area; (4)2N4900 complement to type 2N4912.
Diagrams
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 2N4900X |
Other |
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Data Sheet |
Negotiable |
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2N4900 |
Other |
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Data Sheet |
Negotiable |
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